Interface: 9 pims SD standard Interface SLC NAND Flash Capacity: Standard: 1GB, 2GB; SDHC: 4GB, 64GB Data transfer rate: 􀂋Sustain Read: 15Mbytes/s. (MAX) 􀂋Sustain Write: 15Mbytes/s (MAX) Error Correction Function: Buil-in ECC corrects up to 28 bits per 1 KB Insertion/removal: 15,000 Cycles Dimension: 24x32x2.1mm (LxWxH) Write Protect Switch: 1,000 cycles Operating temperature: 0c to 70c celcius

2.2. Error Detection and Correction
Highly sophisticated Error Correction Code algorithms are implemented. The ECC unit consists of the Parity Unit (parity-byte generation) and the Syndrome Unit (syndrome-byte computation). This unit implements an algorithm that can correct 28 bits per 1 KB in an ECC block. Code-byte generation during write operations, as well as error detection during read operation, is implemented on the fly without any speed penalties.

Wear Leveling
Flash memory can be erased within a limited number of times. This number is called the erase cycle limit or write endurance limit and is defined by the flash array vendor. The erase cycle limit applies to each individual erase block in the flash device. InnoDisk Industrial SD Card uses a wear-leveling algorithm to ensure that consecutive writes of a specific sector are not written physically to the same page and block in the flash. This spreads flash media usage evenly across all pages, thereby extending flash lifetime.

Bad Blocks Management
Bad Blocks are blocks that contain one or more invalid bits whose reliability are not guaranteed. The Bad Blocks may be presented while the SD is shipped, or may develop during the life time of the SD. The Bad Blocks will not exceed more than 3% of the total device volume. When the Bad Blocks is detected, it will be flagged, and not be used anymore. The SD implement Bad Blocks management, Bad Blocks replacement, Error Correct Code to avoid data error occurred. The functions will be enabled automatically to transfer data from Bad Blocks to spare blocks, and correct error bit.